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Morphology of sic epitaxial layers grown by temperature gradient zone melting (I). Dependence of the crystallization boundary smoothness on the epitaxial layers growth conditions
Author(s) -
Peev N. S.,
Tairov Yu. M.,
Smirnova N. A.,
Kalnin A. A.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220607
Subject(s) - crystallization , epitaxy , smoothness , materials science , boundary (topology) , morphology (biology) , temperature gradient , mineralogy , crystal growth , layer (electronics) , crystallography , thermodynamics , composite material , geology , chemistry , physics , mathematics , mathematical analysis , paleontology , quantum mechanics
The dependence of the smoothness of the crystallization boundary on the temperature gradient zone melting conditions is investigated. The observed depth of the crystallization boundary is compared with the depth, calculated by the method proposed by D. E. TEMKIN.