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On the origin of the (1 2 16)‐orientation in epitaxial AIN layers on R‐plane sapphire
Author(s) -
Georgi Ch.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220605
Subject(s) - epitaxy , sapphire , metalorganic vapour phase epitaxy , crystal twinning , orientation (vector space) , materials science , plane (geometry) , crystallography , condensed matter physics , optics , geometry , chemistry , physics , layer (electronics) , nanotechnology , mathematics , microstructure , laser
Epitaxial AIN grown by MOCVD on (01 1 2)Al 2 O 3 substrates usually is (1 2 10)‐oriented. Here for the first time (1 2 16)AIN was found in MOCVD layers. This AIN orientation is known from other growth techniques, its origin is generally not understood. An explanation is given based on twinning in the early growth stages which is also applicable to the growth of (1 2 16)ZnO on (01 1 2)Al 2 O 3 .