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About the fluorine chemistry in MCVD: The mechanism of fluorine incorporation into SiO 2 layers
Author(s) -
Kirchhof J.,
Unger S.,
Knappe B.,
Kleinert P.,
Funke A.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220409
Subject(s) - fluorine , chemistry , inorganic chemistry , chemical engineering , organic chemistry , engineering
Fluorine incorporation during the deposition of silica layers is studied under MCVD conditions using C 2 F 3 Cl 3 as fluorine source. The experimental results are compared with known models of the incorporation mechanism. It is found that a gas/solid equilibrium during the consolidation step determines the final fluorine content of the layers.