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Simplified treatment of transient doping behaviour in CVD (II)
Author(s) -
Arnold H.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220406
Subject(s) - doping , transient (computer programming) , dopant , capacitance , materials science , simple (philosophy) , deposition (geology) , chemical physics , condensed matter physics , analytical chemistry (journal) , chemistry , optoelectronics , physics , electrode , chromatography , philosophy , epistemology , paleontology , sediment , computer science , biology , operating system
Using circuit representations, the influence of the deposition rate for semiconducting CVD layers on transient behavior of doping concentrations is rechecked for a simple decomposition reaction of the dopant species. The existence of a space‐charge region below the surface is taken into account. Simple estimations show that atomically abrupt doping transitions are to be expected, if the storage of foreign atoms in the surface is responsible for transient behaviour, and if their concentration becomes frozen in. In order to explain flatter doping profiles occurring with As and P in Si, molecular storage has to be included in the study. Only some simplified cases with one capacitance, or a sum of capacitances, in the circuit representation are being treated.