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Formation of inclusions in CaF 2 single crystals
Author(s) -
Dressler L.,
Reimann R.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220404
Subject(s) - impurity , inclusion (mineral) , crystal growth , chemistry , materials science , crystallography , mineralogy , chemical engineering , organic chemistry , engineering
It is reported on formation of inclusions during the Stockbarger growth of CaF 2 . It the centre of this paper, hollows (gaseous or vacuum inclusions) are considered. Two different kinds of formation processes being possible under special growth conditions are discussed (segregation of gaseous impurity, entrapment of impurity‐rich liquid at cell boundaries of growth cells).