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Characterisation of MoSe x Te 2− x (0 ⩽ x ⩽ 2) electrodes in terms of energetic location of valence and conduction bands
Author(s) -
Agarwal M. K.,
Patel P. D.,
Joshi R. M.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220223
Subject(s) - valence (chemistry) , electrode , platinum , conduction band , thermal conduction , materials science , semimetal , analytical chemistry (journal) , aqueous solution , iodide , band gap , valence band , chemistry , optoelectronics , inorganic chemistry , physics , electron , biochemistry , organic chemistry , chromatography , quantum mechanics , composite material , catalysis
The layer type MoSe x Te 2− x (0 ≦ x ≦ 2) has been grown by chemical vapour transport technique. The photoelectrochemical solar cells have been fabricated using the grown crystals as photoelectrodes and platinum grid as counter electrode in aqueous iodine/iodide solution. The optical band gap determination has been done from the study of the spectral response of the cells. The location of valence and conduction band edges and flat kind potentials have been evaluated using Mott‐Schottky plots.