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Microhardness of tetrahedrally bonded elemental and binary semiconductors
Author(s) -
Neumann H.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220222
Subject(s) - indentation hardness , wurtzite crystal structure , lattice constant , materials science , crystallography , diamond , mineralogy , chemistry , thermodynamics , metallurgy , microstructure , physics , hexagonal crystal system , optics , diffraction
An analysis of experimental microhardness data shows that the microhardness at room temperature of the diamond, zincblende and wurtzite structure compounds follows the simple relation H = h o a − x T m (1 – g o f i ) where a is the lattice parameter T m the melting temperature, f i the spectroscopically defined bond ionicity and h o , x, and g o are constants having the same values for all compounds. The close relation between microhardness and bulk modulus is discussed.