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Observation of concentration boundary layers around growing or dissolving KH 2 PO 4 crystals in stagnant solutions
Author(s) -
van Enckevort W. J. P.,
Matuchová M.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220204
Subject(s) - dissolution , aqueous solution , schlieren , saturation (graph theory) , boundary layer , diffusion , crystal (programming language) , convection , crystal growth , kinetics , chemistry , analytical chemistry (journal) , mineralogy , materials science , thermodynamics , crystallography , optics , chromatography , physics , mathematics , combinatorics , quantum mechanics , computer science , programming language
The solute concentration profiles around KH 2 PO 4 crystals growing or dissoloving in stagnant aqueous solutions were studied by the schlieren method after Toepler. By this technique the thicknesses of concentration boundary layers around the crystals, formed by free convection of solution, were measured in dependence of crystal size and super (under) saturation. In the case of dissolution, theoretical estimation of the boundary layer thickness yielded a fair agreement with the observed value. For growth, the process is dominantly limited by surface kinetics, whereas volume diffusion plays a minor role.