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Defect generation on mechanical surface defects before and after the oxidation (I). TEM investigations on the nucleation of oxidation stacking faults at mechanically induced weak surface defects
Author(s) -
Morgenstern G.,
Weidner G.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220120
Subject(s) - nucleation , stacking , stacking fault , materials science , chemical physics , silicon , crystallography , surface (topology) , partial dislocations , crystallographic defect , condensed matter physics , composite material , dislocation , chemistry , optoelectronics , geometry , physics , mathematics , organic chemistry
In order to obtain information on the nucleation mechanism of oxidation stacking faults, mechanically induced weak surface defects as simulated by low‐load scratches were investigated with TEM before and after a short‐time wet oxidation at 1050 °C. The experimental results could not confirm the existing models which explain stacking fault nucleation by the splitting of complete dislocations. Rather it was found that clusters of silicon interstitials are generated due to strong local compression during scratching, which then act as nuclei for stacking faults in the subsequent oxydation process.