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Suppression of epitaxial silicon layer doping with boron in the presence of hydrogen chloride
Author(s) -
Morgenstern Th.,
Kühne H.,
Kokovin G. A.,
Testova N. A.,
Titov A. A.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220119
Subject(s) - boron , silicon , doping , epitaxy , layer (electronics) , hydrogen , materials science , chloride , hydrogen chloride , inorganic chemistry , chemistry , chemical engineering , nanotechnology , optoelectronics , metallurgy , organic chemistry , engineering
Abstract The present paper informs about thermodynamic calculations of the BClH system, carried out irrespective of data, already published by other authors. It further deals with recent experimental results on silicon doping with boron in the presence of hydrogen chloride, the layer growth rate being varied. Finally the possibility of quantitatively interpreting the suppressing influence of hydrogen chloride on the doping of silicon with boron is discussed.