Premium
Growth kinetics, structure and surface morphology of AlN/α‐Al 2 O 3 epitaxial layers
Author(s) -
Bugge F.,
Efimov A. N.,
Pichugin I. G.,
Tsaregorodtsev A. M.,
Chernov M. A.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220117
Subject(s) - epitaxy , impurity , morphology (biology) , growth rate , stoichiometry , sapphire , substrate (aquarium) , materials science , kinetics , layer (electronics) , analytical chemistry (journal) , crystallography , chemical engineering , mineralogy , chemistry , nanotechnology , optics , chromatography , laser , geometry , mathematics , physics , organic chemistry , oceanography , quantum mechanics , engineering , biology , geology , genetics
The gas‐phase epitaxy of AlN on saphire substrates in the system AlHClNH 3 –Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of AlN‐layer is proportional to AlCl concentration in the growth zone and does not depend on NH 3 partial pressure. This is in accordance with the law of diffusional stoichiometry. The morphology of AlN‐layers was shown to be dependent on the growth rate and the substrate orientation. Smooth mirror‐like layers were prepared on the sapphire planes (0001) and (1120) at low growth rates. X‐ray microanalysis showed the oxygen impurity content at the level 1 — 5 · 10 21 cm −3 . Other impurities were not available.