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Liquid Phase Epitaxy of SiC in the System SiTbSiC by Temperature Gradient Zone Melting (I). Investigation of Solubilities in the System SiTbSiC
Author(s) -
Tairov Yu. M.,
Peev N. S.,
Smirnova N. A.,
Kalnin A. A.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170211203
Subject(s) - materials science , atmospheric temperature range , melting temperature , epitaxy , solubility , phase (matter) , temperature gradient , solid solubility , solvent , liquid phase , zone melting , analytical chemistry (journal) , mineralogy , chemical engineering , chemistry , metallurgy , composite material , thermodynamics , solid solution , chromatography , organic chemistry , physics , layer (electronics) , quantum mechanics , engineering
In the paper which is divided into three parts the liquid phase epitaxy of SiC by temperature gradient zone melting with the solvent SiTb is discussed. In the first part the solubility of SiC at different initial compositions of the SiTb solvent is studied in the temperature range 2000–2500 K.