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4,2 K‐Photoluminescence Study of the Annealing Process in Neutron‐irradiated Silicon
Author(s) -
Sickert J.,
Herzog R.,
Flade T.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170211120
Subject(s) - annealing (glass) , impurity , photoluminescence , silicon , materials science , irradiation , luminescence , electrical resistivity and conductivity , neutron , neutron irradiation , kinetic energy , hall effect , radiochemistry , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , nuclear physics , physics , organic chemistry , chromatography , quantum mechanics
Described are experimental results of impurity characterisation and defect kinetic studies aimed at investigating annealing processes in neutron‐irradiated silicon. In addition to Hall effect and resistivity measurements, low‐temperature luminescence spectroscopy has been made use of for the physical characterisation, making it possible to determine shallow impurities and observe their kinetic during annealing, especially with respect to phosphorus activation, along with the changes in the electrical properties.