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Simplified Treatment of Transient Doping Behaviour in CVD(I)
Author(s) -
Arnold H.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170211109
Subject(s) - dopant , doping , transient (computer programming) , semiconductor , silicon , epitaxy , materials science , work (physics) , phase (matter) , partial pressure , semiconductor device , adsorption , representation (politics) , chemical physics , optoelectronics , chemistry , nanotechnology , thermodynamics , computer science , physics , organic chemistry , layer (electronics) , oxygen , operating system , politics , political science , law
Physiochemical reasons are discussed for the delayed response of doping concentrations within epitaxial semiconductors (Si and III‐V compounds) to changes of the input partial pressure of dopant species for CVD processes. A simplified circuit representation for doping is used that takes care of five serial process steps, the first three of which are the topic of this work (Part I). Among the corresponding storage phenomena in which the gas phase is involved, those with adsorptional influences are to be expected as most important for transient behaviour. Storage of dopant species at the semiconductor surface is included into the circuit representation, as it has been done by Reif et al. for silicon doping. Moreover, adsorption at the reactor wall is represented approximately, assuming equilibrium with the gas phase.