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Doping of PbTe with Ga during Growth from the Vapour Phase
Author(s) -
Möllmann K.P.,
Siche D.,
Zajnudinov S.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170211007
Subject(s) - doping , materials science , photoelectric effect , phase (matter) , crystal (programming language) , crystal growth , condensed matter physics , vapor phase , crystallography , optoelectronics , chemistry , thermodynamics , physics , computer science , organic chemistry , programming language
In the present paper a method for doping of PbTe with Ga during crystal growth from the vapour phase is presented. The galvanomagnetic and photoelectric properties of the produced material are compared with results of other techniques and the equivalence of these physical properties is proved. Furthermore a defect model of the build‐in mechanism of Ga in PbTe is shown.