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Growth and Electron Microscopical Investigations of (CaBa)F 2 Epitaxial Layers on GaAs and InP Substrates
Author(s) -
Schumann B.,
Kühn G.,
Wagner G.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210903
Subject(s) - epitaxy , reflection high energy electron diffraction , electron diffraction , materials science , crystallography , spinodal decomposition , analytical chemistry (journal) , mineralogy , chemistry , diffraction , nanotechnology , optics , layer (electronics) , phase (matter) , physics , organic chemistry , chromatography
(CaBa)F 2 layers have been grown on (100)‐oriented GaAs and InP substrates by flash evaporation technique. They were investigated by means of electron microscopical methods (RHEED, TED, TEM). Epitaxial growth was found at temperatures in the range of 725 to 825 K for GaAs substrates and 700 to 800 K for InP substrates, respectively. The films showed a fine‐grained structure and consisted of two phases always with a composition of approximately Ca 0.99 Ba 0.01 F 2 and Ca 0.08 Ba 0.92 F 2 . This is in accordance with the occurrence of a miscibility gap observed in the binary CaF 2 BaF 2 system.