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The Use of an Electrode Potential in the Investigation of a Single‐Crystal Semiconductor Matrix (II) Anisotropy of Surface Damages in Silicon Single Crystal Cutting
Author(s) -
Gulidov D. N.,
Aidelman B. L.,
Yu. Charlamov V.,
Chistyakov Yu. D.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210828
Subject(s) - anisotropy , silicon , azimuth , materials science , planar , single crystal , abrasive , electrode , semiconductor , crystal (programming language) , plane (geometry) , condensed matter physics , optics , crystallography , optoelectronics , composite material , geometry , chemistry , physics , programming language , computer graphics (images) , mathematics , computer science
Anisotropy of the depth of surface damages in cutting of single crystal silicon along (111) plane by ID saw is investigated due to electrode potential technique. The reasons of appearance of azimuth and planar anisotropy depending on cutting rate directions are shown. In the cutting rate change in the range of 25–100 mm/min doesn't result in the change of azimuth anisotropy character. It is only abrasive action vector that is supposed to be responsible for the appearance of azimuth anisotropy.