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Electrochemical Deposition of CdTe Layers. Their Structure and Electrical Properties
Author(s) -
Valvoda V.,
Toušková J.,
Kindl D.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210803
Subject(s) - amorphous solid , electrical resistivity and conductivity , annealing (glass) , tellurium , deposition (geology) , electrochemistry , materials science , aqueous solution , conductivity , analytical chemistry (journal) , mineralogy , chemistry , crystallography , metallurgy , electrode , paleontology , sediment , electrical engineering , biology , engineering , chromatography
CdTe layers have been deposited catodically on nickel substrates from an aqueous solution of CdSO 4 and TeO 2 . The degree of erystallinity increases with increasing temperature and decreasing deposition potential. The structure of the layers is cubic with 〈111〉 or 〈110〉 texture which is determined by TeO 2 concentration predominantly. Amorphous phase is found in deposits prepared at higher deposition potential or at lower temperatures of bath (60 °C). After annealing at 200 °C the amorphous deposits crystallized and pure tellurium appeared in diffraction spectra. The resistivity of the films was determined by means of I—V characteristics. Films with deposition potentials (−500 to −400) mV vs SCE are p‐type conductivity whereas at lower potentials (down to − 700 mV vs. SCE) the n‐type material is formed.