Electrochemical Deposition of CdTe Layers. Their Structure and Electrical Properties

CdTe layers have been deposited catodically on nickel substrates from an aqueous solution of CdSO 4 and TeO 2 . The degree of erystallinity increases with increasing temperature and decreasing deposition potential. The structure of the layers is cubic with 〈111〉 or 〈110〉 texture which is determined by TeO 2 concentration predominantly. Amorphous phase is found in deposits prepared at higher deposition potential or at lower temperatures of bath (60 °C). After annealing at 200 °C the amorphous deposits crystallized and pure tellurium appeared in diffraction spectra. The resistivity of the films was determined by means of I—V characteristics. Films with deposition potentials (−500 to −400) mV vs SCE are p‐type conductivity whereas at lower potentials (down to − 700 mV vs. SCE) the n‐type material is formed.