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Dielectric and Electrical Properties of InSe Films
Author(s) -
Rao S. Ramchandar,
Pratap K. J.,
Babu V. Hari
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210724
Subject(s) - ohmic contact , dielectric , materials science , capacitance , electrical breakdown , dielectric strength , optoelectronics , condensed matter physics , composite material , optics , chemistry , electrode , physics , layer (electronics)
The dielectric and electrical properties of sandwiched AlInSeAl structures of different thicknesses are investigated. For all the thicknesses the capacitance and tan δ decrease with increase in frequency. The I‐V characteristics of Al‐InSe‐Al structures have been studied for different thicknesses. These curves exhibit three regions ohmic, non‐ohmic and breakdown regions. Optical micrographs of breakdown patterns at different stages have been taken and the results are discussed.