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Defects in LEC‐grown Indium Phosphide Crystals Doped with Tin
Author(s) -
Wagner G.,
Gottschalch V.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210717
Subject(s) - dislocation , materials science , crystallography , climb , doping , condensed matter physics , composite material , chemistry , optoelectronics , physics , thermodynamics
Abstract Crystalline defects in Sn‐doped LEC indium phosphide have been revealed by chemical etching and analyzed by TEM. Grown‐in dislocations, various kinds of defect clusters and colonies of microdefects were found. The symmetrical defect clusters are shown to equate mostly with larger dislocation loops exhibiting shear components and/or other dislocation arrangements generated by a stress source which is positioned in the centre of the dislocation cluster. Those centres are often formed by a plate‐like agglomeration composited of tiny inclusions and very small faulted dislocation loops. Such planarly arranged accumulations of microdefects lie on {111} planes. The direct vicinity of single threading grown‐in dislocations is always enriched with tiny perfect dislocation loops and precipitates. Additionally, very large isolated interstitial‐type perfect dislocation loops with b = a 0 /2 〈110〉 have been found by TEM experiments. Mostly, the {110} habit plane of such loops is decorated with an high number of small dislocation loops and precipitates as a consequence of dislocation climb.