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Native Point Defects and Nonstoichiometry in GaAs (II) Mechanism of Formation and Degradation of Semiinsulating Properties of Undoped Gallium Arsenide Crystals
Author(s) -
Morozov A. N.,
Bublik V. T.,
Yu. Morozova O.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210711
Subject(s) - crystallographic defect , gallium arsenide , gallium , enthalpy , materials science , chemistry , crystallography , thermodynamics , metallurgy , optoelectronics , physics
The nature of the main electron trap, EL2, in undoped semiinsulating GaAs crystals have been studied both qualitatively and quantitatively. It has been shown that point defects which, most probably, are responsible for the EL2 level are antisite As Ga defects or (As i V Gs ) complexes which are indistinguishable from the thermodynamic standpoint. The enthalpy and entropy of As Ga formation according to the reaction As As + V Ga ⇄ As Ga + V As are equal to 0.5 eV and −7k, respectively.