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Effect of Fast Electron Irradiation and Annealing on the Luminescence in GaAs(Zn) crystals. Irradiation‐induced 1.26 and 1.39 eV Emission Bands
Author(s) -
Glinchuk K. D.,
Guroshev V. I.,
Prokhorovich A. V.,
Zayats N. S.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210624
Subject(s) - irradiation , photoluminescence , annealing (glass) , luminescence , zinc , electron beam processing , materials science , doping , analytical chemistry (journal) , crystallographic defect , chemistry , crystallography , optoelectronics , physics , metallurgy , chromatography , nuclear physics
The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc‐doped p ‐type GaAs crystals is studied and analyzed. Rather strong emission bands peaked at hv m (77 K) near 1.26 eV (induced by electron irradiation) and 1.39 eV (induced by annealing of irradiated crystals) are observed. Evidence is presented that the 1.26 and 1.39 eV emission bands occur due to radiative electronic transitions in As i Zn G a and V As Zn Ga pairs induced by irradiation and annealing of irradiated crystals, accordingly. The observed variations in the intensities of the 1.26 and 1.39 eV emission bands upon irradiation and subsequent annealings of GaAs(Zn) crystals are explained in terms of irradiation and annealing‐induced variations in the amount of 1.26 and 1.39 eV radiative centres resulting from: a) the effective interaction of mobile radiation‐induced defects in the arsenic sublattice with zinc atoms leading to the formation of As i Zn Ga and V As Zn Ga pairs; b) the thermal dissociation of As i Zn Ga and V As Zn Ga pairs on individual components.