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Stoichiometry of Thin Layers of CuInSe 2 Investigated by ESCA
Author(s) -
Sommer H.,
John W.,
Meisel A.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210506
Subject(s) - stoichiometry , epitaxy , substrate (aquarium) , thin film , analytical chemistry (journal) , chemistry , materials science , mineralogy , layer (electronics) , crystallography , nanotechnology , chromatography , oceanography , geology
The stoichiometry of thin epitaxial layers of CuInSe 2 on CaF 2 and GaAs substrates was determined by the ESCA method. Substrate temperature was varied. It was found, that layers of exact stoichiometry are got at substrate temperatures around 700 K.