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Plasma Etching of Niobium‐SiO x Layers
Author(s) -
Schelle D.,
Tiller H. J.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210409
Subject(s) - etching (microfabrication) , niobium , plasma , plasma etching , reactive ion etching , limiting , materials science , analytical chemistry (journal) , diode , chemistry , metallurgy , optoelectronics , nanotechnology , layer (electronics) , chromatography , mechanical engineering , physics , quantum mechanics , engineering
CF 4 ‐plasma etching of niobium and SiO x layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by an factor of ten. On the basis of etch rate dependences on process parameters and thermodynamic data it has been suggested the generation of flourine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitavelty and quantitatively (on account of data from literature) the measured results.