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Si x Ge 1− x GaAs Heterojunction IMPATT‐Diodes
Author(s) -
Brailovskii E. J.,
Matveeva L. A.,
Meľnikov G. D.,
Mikhailov J. F.,
Semenova S. N.,
Tkhorik J. A.,
Khazan L. S.,
Laichter V.,
Červenák J.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210316
Subject(s) - diode , heterojunction , impatt diode , optoelectronics , materials science , schottky diode , schottky barrier
Experimental research IMPATT‐diodes on heterostructures Si x Ge 1− x ‐GaAs showed that the interphase boundary is noted with high thermal and radiation resistance. It is shown that such diodes are an equivalent alternative IMPATT‐diodes with type of Schottky barrier.