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Dry Patterning of Al and Al Alloys
Author(s) -
Sameith D.,
Tiller H.J.,
Breitbarth F.W.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210315
Subject(s) - aluminium , etching (microfabrication) , diffusion , limiting , chlorine , dry etching , layer (electronics) , plasma , plasma etching , chemistry , carbon fibers , chemical engineering , analytical chemistry (journal) , materials science , metallurgy , composite material , thermodynamics , chromatography , organic chemistry , composite number , mechanical engineering , physics , quantum mechanics , engineering
Plasmachemical etching of Aluminium in chlorine containing discharges is discussed from a thermochemical point of view. A model of Al etching is proposed, in which diffusion of reaction products through the carbon‐rich deposite layer is considered to be rate‐limiting. The model quantitatively describes the dependence of the etch reaction on different process parameters of the CCl 4 ‐plasma.