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AgGaSe 2 on {100} and {110} GaAs—Special Features of Epitaxial Growth
Author(s) -
Tempel A.,
Schumann B.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210302
Subject(s) - reflection high energy electron diffraction , epitaxy , electron diffraction , reflection (computer programming) , flash evaporation , materials science , optoelectronics , evaporation , crystallography , thin film , diffraction , optics , chemistry , nanotechnology , physics , computer science , layer (electronics) , programming language , chromatography , thermodynamics
AgGaSe 2 thin epitaxial layers onto {100} and {110} oriented GaAs substrates were prepared by flash evaporation technique and investigated by the RHEED method (reflection high energy electron diffraction). Special epitaxial relationships were found and the results will be discussed.