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Luminescence and Photoconductivity Caused by Antisite Defects in CdIn 2 S 4 Single Crystals
Author(s) -
Georgobiani A. N.,
Gruzintsev A. N.,
Ratseev S. A.,
Tezlevan V. E.,
Tiginyanu I. M.,
Ursaki V. V.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210218
Subject(s) - photoconductivity , photoluminescence , annealing (glass) , luminescence , materials science , argon , spectral line , conductivity , ion , optoelectronics , crystallography , analytical chemistry (journal) , chemistry , atomic physics , metallurgy , physics , organic chemistry , chromatography , astronomy
Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy positions of levels of antisite In cd and Cd In defects are found. The role of antisite defects in the process of conductivity compensation is analysed.