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Field‐Induced Orientation Transition in Ferroelectric Liquid Crystals
Author(s) -
Schiller P.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210141
Subject(s) - bistability , ferroelectricity , electric field , condensed matter physics , liquid crystal , materials science , voltage , field (mathematics) , orientation (vector space) , domain (mathematical analysis) , domain wall (magnetism) , optoelectronics , physics , magnetic field , dielectric , geometry , mathematics , quantum mechanics , pure mathematics , mathematical analysis , magnetization
Static and dynamic effects of a fast bistable device containing a ferroelectric liquid crystal are investigated theoretically. The switching mechanisms are different at low and high electric fields. There is a critical voltage which separates a bulk switching regime from the regime of domain wall motion. This threshold is determined as a function of physical device parameters.