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Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH 3 ) 3 · N(CH 3 ) 3 ‐Adduct Pyrolysis
Author(s) -
Seifert W.,
Franzheld R.,
Bönisch F.,
Butter E.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210104
Subject(s) - epitaxy , adduct , photoluminescence , impurity , acceptor , sapphire , pyrolysis , chemistry , analytical chemistry (journal) , oxygen , vapor phase , carbon fibers , crystallography , materials science , organic chemistry , laser , optoelectronics , optics , physics , layer (electronics) , composite number , composite material , thermodynamics , condensed matter physics
Epitaxial layers of GaN have been grown on {1102} sapphire in atmospheric OMCVD system using Ga(CH 3 ) 3 · N(CH 3 ) 3 adduct and NH 3 as reactants. Optimum growth conditions for crystallographically perfect layers have been found at temperatures between 850 and 1000 °C. With increasing temperature the growth rate decreases whereas the concentration of free carriers increases. In photoluminescence spectra only the donor‐acceptor pair recombination could be found. It is concluded that the donor oxygen (O N ) and the acceptor carbon (C N ) are the dominant impurities.