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Vapour Phase Epitaxy of Ga x In 1− x As in the GaInHClAsH 3 H 2 ‐System Using a Mixed Ga/In Source
Author(s) -
Jacobs K.,
Bugge F.,
Simon I.
Publication year - 1986
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170210102
Subject(s) - hydride , epitaxy , deposition (geology) , crystal (programming language) , chemistry , phase (matter) , thermodynamics , chemical composition , analytical chemistry (journal) , crystallography , materials science , mineralogy , physics , hydrogen , organic chemistry , geology , paleontology , layer (electronics) , sediment , computer science , programming language
The mixed crystal composition of Ga x In 1− x As layers is analysed as a function of the composition of a mixed Ga/In source during VPE in the hydride system. Experimental results are compared with thermodynamic calculations. Both thermodynamics of the deposition reactions and thermodynamies of the souree reactions are considered in the calculations.