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Electronic structure investigation of V 1− x Nb x O 2 mixed oxide by XES and XPS
Author(s) -
Werfel F.,
Rohländer D.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170201222
Subject(s) - x ray photoelectron spectroscopy , valence (chemistry) , spectral line , analytical chemistry (journal) , oxide , doping , semimetal , electronic structure , chemistry , electronic band structure , valence band , emission spectrum , materials science , band gap , nuclear magnetic resonance , condensed matter physics , physics , computational chemistry , optoelectronics , organic chemistry , chromatography , astronomy
The mixed oxide system V 1− x Nb x O 2 ( x ≦ 0.12) has been studied by X‐ray and photo‐emission spectroscopy as a function of the composition. The metal L valence band spectra (VL III and NbLβ 2.15 ) with increasing Nb concentration change their width and relative band intensity substantially pointing to charge flow and hybridization effects. The XPS valence band for x ≧ 0.04 indicates a total d band shift of 0.4 eV relative to smaller Nb concentrations. The measured core level spectra at higher Nb doping x ≈ 0.10 support the expected existence of V 3+ ‐Nb 5+ pairs. A comparison of different X‐ray spectra and the XPS valence band spectrum for x = 0.08 exhibits a more stronger V3d localization relative to Nb4d, favouring charge transfer and bonding variations with Nb doping. Our spectroscopial data confirm the established ideas concerning the electronic structure of rutile‐like compounds and its change at the phase transition point.