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Microstructure and spacings of directionally solidified metal‐semiconductor eutectic alloys
Author(s) -
Vetter J.,
Frühauf J.,
Schmidt G.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170201218
Subject(s) - eutectic system , materials science , microstructure , semiconductor , volume fraction , germanium , growth rate , metal , diffusion , phase (matter) , eutectic bonding , metallurgy , temperature gradient , crystallography , analytical chemistry (journal) , composite material , silicon , thermodynamics , chemistry , optoelectronics , geometry , mathematics , physics , organic chemistry , quantum mechanics , chromatography
Directionally solidified metal‐semiconductor eutectic alloys, representing nonfacetted facetted eutectics, show a variety of microstructures caused by the great differences in semiconductor volume fraction (ZnGe 7,8 %; GeZrGe 2 98.6 %), the influence of growth rate and temperature gradient at the solid‐liquid interface. The AlSi, AgSi, AgGe, ZnGe, Cu 3 SiSi, NiGeGe, CoGe 2 Ge, Mn 3 Ge 2 Ge, FeGe 2 Ge, Mn 11 Si 19 Si, Cu 3 GeGe, GeTiGe 2 and GeZrGe 2 eutectics habe been investigated. The following three models are applicable for the calculation of the spacings as a function of growth rate and temperature gradient at the solid‐liquid interface to certain microstructures: diffusion‐determined growth, branchinglimited growth and phase‐lead‐determined growth.