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Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD silicon
Author(s) -
Kokovin† G. A.,
Testova N. A.,
Titov A. A.,
Morgenstern Th.,
Kühne H.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170201206
Subject(s) - arsine , silicon , arsenic , decomposition , epitaxy , doping , atmospheric pressure , chemistry , deposition (geology) , range (aeronautics) , mineralogy , analytical chemistry (journal) , thermodynamics , materials science , chemical engineering , environmental chemistry , organic chemistry , optoelectronics , catalysis , geology , composite material , physics , phosphine , paleontology , oceanography , sediment , engineering , layer (electronics)
Abstract Calculating the composition of the decomposition equilibrium of AsH 3 H 2 mixtures within the temperature range of epitaxial CVD‐silicon deposition shows AsH 2 to be the main component for atmospheric pressure. A drop in total pressure causes As to appear as the second main component. Taking into account AsH 2 ‐ and As particles gives rise to an incorporation of arsenic, less and less depending on total pressure with decreasing pressure. With the aid of the incorporation equation, developed in the present paper, the experimental results on the incorporation of arsenic under reduced pressure obtained by Herring, can be explained clear of contradiction.