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The influence of the growth temperature on residual impurities in SSD‐GaP
Author(s) -
Kirsten P.,
Koil H.,
Siegel W.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170201117
Subject(s) - acceptor , impurity , band gap , silicon , carbon fibers , photoluminescence , growth rate , analytical chemistry (journal) , materials science , residual , chemistry , condensed matter physics , optoelectronics , physics , geometry , organic chemistry , mathematics , chromatography , algorithm , composite number , computer science , composite material
The increase of the growth temperature during the SSD process causes a rise of the growth rate of the GaP. Hall effect and photoluminescence measurements as well as chemical analysis were used to investigate the change of the contents of residual impurities in the GaP in dependence on the growth temperature. Carbon was detected to be the dominating shallow acceptor in the undoped p‐type SSD‐GaP. Its concentration increases clearly with raising growth temperature whereas for S and N indirectly can be concluded that their concentrations diminish. Carbon and silicon are incorporated in the GaP in part in electrically inactive form. In all samples exists beside the shallow acceptor a medium deep acceptor the concentration of which is strongly correlated to that of the carbon acceptor. The luminescencespectra of the p‐type samples show a typical broad band with a maximum at 1.90 eV whose origin is discussed.