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X‐Ray photoelectron valence band spectra from semiconductors Bi 2 Te 3 and Sb 2 Te 3
Author(s) -
Chassé T.,
Berg U.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170201109
Subject(s) - photoionization , spectral line , valence (chemistry) , semiconductor , x ray photoelectron spectroscopy , valence band , electronic structure , electronic band structure , atomic physics , materials science , chemistry , crystallography , band gap , condensed matter physics , physics , ionization , nuclear magnetic resonance , computational chemistry , optoelectronics , ion , organic chemistry , astronomy
Angular resolved X‐ray photoelectron spectra (ARXPS) are measured for valence bands of the layer semiconductors Bi 2 Te 3 and Sb 2 Te 3 . Starting from simple models taking into consideration the atomic construction, photoionization cross sections and the crystal structure the spectra can be interpreted. Important conclusions are drawn on the electronic structure of these semiconducting compounds.

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