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Energy band‐gap in elastic‐strained heteroepitaxial layers
Author(s) -
Konnikov S. G.,
Umansky V. E.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170201013
Subject(s) - heterojunction , scanning electron microscope , materials science , photoluminescence , band gap , magnification , elastic energy , stress (linguistics) , optics , optoelectronics , internal stress , energy (signal processing) , composite material , physics , linguistics , philosophy , quantum mechanics
The effect of internal elastic stress on energy band‐gap shift in the A 3 B 5 heteroepitaxial layers was investigated. The possibilities to get higher accuracy of divergent beam X‐ray stress determination method, designed in the scanning electron microscope (SEM), was presented. X‐ray topography method in the SEM with X‐ray magnification from 2 up to 10 was for the first time described. The epilayer photoluminescence (PL) peak energy shift as a function of internal elastic stress was measured on the GaInP/GaAs, GAInAsP/InP heterostructures and the influence of different factors on the accuracy of the results was discussed.