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Characterization of single crystal silicon solar cells through illuminated I‐V family curves
Author(s) -
Martell A.,
Aguilera S.,
Safranova N.,
García M.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200926
Subject(s) - silicon , diffusion , crystalline silicon , solar cell , characterization (materials science) , single crystal , crystal (programming language) , monocrystalline silicon , materials science , current (fluid) , chemistry , crystallography , molecular physics , optics , physics , optoelectronics , thermodynamics , nanotechnology , computer science , programming language
In this paper we analize the illuminated I‐V family curves of the single crystal n/p silicon solar cells obtained in our laboratory. It is demonstrated that through the correction of the higher slope region from the V oc vs ln Isc curve, experimental values of the diffusion current, with great repetibility, are obtained, which are in good agreement with theory. Influence of recombination current on fundamental parameters of solar cells is analized, making use of programable calculator. It is demonstrated that for A ≧ 3 this influence is negligible.