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Raman scattering study of dopant homogeneity in GaP and GaAs single crystals
Author(s) -
Irmer G.,
Monecke J.,
Siegel W.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200821
Subject(s) - dopant , raman scattering , homogeneity (statistics) , materials science , raman spectroscopy , semiconductor , scattering , polar , optoelectronics , condensed matter physics , doping , optics , physics , astronomy , statistics , mathematics
Application of Raman scattering as a non‐destructive method with high spatial resolution suitable for the determination of charge carrier profiles connected with dopant segregations in polar semiconductors is reported. Single crystals of GaP and GaAs are investigated. The results are in good agreement with electrical measurements.