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The silicon impurity as a possible growth‐regime indicator for LiNbO 3 crystals
Author(s) -
Erdei S.,
Szaller Zs.,
Raksányi K.,
Matók Gy.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200808
Subject(s) - supercooling , opacity , impurity , silicon , degree (music) , crystal (programming language) , observable , crystal growth , materials science , chemistry , crystallography , thermodynamics , optics , physics , optoelectronics , organic chemistry , quantum mechanics , computer science , acoustics , programming language
The influence of Si concentration and temperature regimes on the visually observable properties of LiNbO 3 single crystals grown by Czochralski method was studied. Si concentration measurements were carried out and minima in the radial and axial distribution curves have been established. An upper estimate is given for the equilibrium distribution coefficient of Si in LiNbO 3 . A direct correlation has been found between the degree of opacity and the Si concentration. The variation of the Grashof number during growth and a correlated modification of the structure of the concentration layer width, implying a position dependent fulfilment of the Hurle‐Bardsley criterium for constitutional supercooling, accounts reasonably well with the visually observable properties of the opaque regions appearing in the course of crystal growth. The use of Si as an overall indicator for the characterization of growth regimes is discussed.