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Determination of the interface structure of AgGaSe 2 /{100}‐GaAs epitaxial layers by means of RHEED and etching methods
Author(s) -
Tempel A.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200730
Subject(s) - epitaxy , von neumann architecture , materials science , computer science , nanotechnology , layer (electronics) , programming language