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Stereological analysis of dislocation arrangements in crystals from TEM images
Author(s) -
Hanisch K.H.,
Klimanek P.,
Stoyan D.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200712
Subject(s) - dislocation , characterization (materials science) , voronoi diagram , materials science , homogeneous , interpretation (philosophy) , condensed matter physics , statistical physics , crystallography , geometry , mathematics , physics , computer science , nanotechnology , chemistry , programming language
Ideas of stochastic geometry have been used in order to develop procedures for stereological characterization of dislocation arrangements in crystals from TEM images. Two conceptions, which can be taken for promising in much cases, are presented in some detail: analysis of statistically homogeneous defect distributions by means of pair — correlation functions and interpretation of statistically inhomogeneous dislocation arrangements in terms of a so‐called Voronoi‐mosaic. Practical application of both methods is demonstrated by analysis of dislocation configurations occurring in metallurgy and solid‐state technology.