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A correlation between concentration of deep levels and growth conditions for VPEGaP
Author(s) -
Seifert W.,
Jacobs K.,
Pickenhain R.,
Biehne G.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200505
Subject(s) - growth rate , chemistry , negative correlation , flow (mathematics) , positive correlation , analytical chemistry (journal) , materials science , mathematics , physics , mechanics , chromatography , geometry , medicine
A minimum in deep level concentration in VPE‐GaP is found which corresponds to exceptional growth conditions near a relative maximum of the growth rate r in dependence on the GaCl input pressure p G̊aCL. The minimum occurs at the cross‐over between mass flow controlled growth (at low p G̊aCL.) and surface reaction controlled growth (at high p G̊aCL.).