A correlation between concentration of deep levels and growth conditions for VPEGaP | Zendy

Seifert W. | Zendy; Jacobs K. | Zendy; Pickenhain R. | Zendy; Biehne G. | Zendy

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A correlation between concentration of deep levels and growth conditions for VPEGaP

Author(s) -

Seifert W.,

Jacobs K.,

Pickenhain R.,

Biehne G.

Publication year - 1985

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170200505

Subject(s) - growth rate , chemistry , negative correlation , flow (mathematics) , positive correlation , analytical chemistry (journal) , materials science , mathematics , physics , mechanics , chromatography , geometry , medicine

A minimum in deep level concentration in VPE‐GaP is found which corresponds to exceptional growth conditions near a relative maximum of the growth rate r in dependence on the GaCl input pressure p G̊aCL. The minimum occurs at the cross‐over between mass flow controlled growth (at low p G̊aCL.) and surface reaction controlled growth (at high p G̊aCL.).

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