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Electrical properties of r.f. sputtered thin films of CuInSe 2 (I)
Author(s) -
AbdulHussein N. A. K.,
Samaan A. N. Y.,
Tomlinson D.,
Hill A. E.,
Neumann H.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200418
Subject(s) - crystallite , thin film , sputtering , electrical resistivity and conductivity , substrate (aquarium) , materials science , deposition (geology) , chemical composition , analytical chemistry (journal) , mineralogy , chemical engineering , chemistry , metallurgy , nanotechnology , electrical engineering , engineering , paleontology , oceanography , organic chemistry , chromatography , sediment , geology , biology
Thin films of CuInSe 2 are deposited by r.f. sputtering onto glass substrates at different r.f. voltages and substrate temperatures using pressed and powder targets. The films are polycrystalline and p‐type conducting. The temperature dependence of the conductivity and the chemical composition of the films are measured as a function of the deposition conditions.