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Doping of epitaxial CVD silicon with arsenic or phosphorus (i). Steady state conditions
Author(s) -
Kühne H.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200411
Subject(s) - dopant , doping , silicon , epitaxy , materials science , chemistry , chemical engineering , thermodynamics , inorganic chemistry , layer (electronics) , nanotechnology , organic chemistry , optoelectronics , physics , engineering
A modified theoretical model of dopant incorporation is discussed, while comparing it with the Reif‐Dutton model. In contrast to the Reif‐Dutton model, which has been based on the adsorption step of dopant substances, the modified model is related to the real dopant incorporation step and its backreaction as the rate controlling factors. By that a thermodynamical decomposition equilibrium of the dopant source material may be established without being influenced by the dopant incorporation. Each component of the decomposition equilibrium acts as a source for making dopant atoms available for incorporation. Equivalent to the Reif‐Dutton model the modified model describes the growth rate influence of the layer on the incorporation of dopants and additionally enables the temperature dependence, total pressure dependence and the specific features of dopant incorporation at high concentrations to be explained.