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Growth mechanisms in GaAs‐VPE at low deposition temperature
Author(s) -
Schwetlick S.,
Seifert W.,
Butter E.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200402
Subject(s) - desorption , deposition (geology) , materials science , chlorine , disproportionation , atmospheric temperature range , hydrogen , growth rate , chemical vapor deposition , analytical chemistry (journal) , chemistry , catalysis , adsorption , thermodynamics , nanotechnology , environmental chemistry , physics , metallurgy , geology , paleontology , biochemistry , geometry , mathematics , organic chemistry , sediment
The VPE growth of GaAs in the system GaAsAsCl 3 with either H 2 or He as the Carrier gas was studied in the range of low deposition temperatures. Down to about 670 °C the growth in the H 2 ‐system is limited by the kinetics of chlorine desorption by molecular hydrogen. The increase in growth rate at lower temperatures results from the onset of GaCl 3 ‐desorption (disproportionation mechanism). The addition of NH 3 to the vapour phase enhances this effect. Below about 700 °C the growth rate in the GaAsAsCl 3 H 2 NH 3 system becomes comparable to that in the GaAsAsCl 3 He‐system, where the GaCl 3 desorption mechanism is the only possible growth mechanism.