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A complex method for structural investigation of GaAs 1− x P x epitaxial layers grown on GaAs substrates
Author(s) -
Petrov Sr.,
Popov A.,
Atanasova R.,
Ivanov Iv.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200311
Subject(s) - epitaxy , diffractometer , substrate (aquarium) , crystallography , diffraction , orientation (vector space) , materials science , x ray crystallography , face (sociological concept) , chemistry , optics , crystal structure , physics , nanotechnology , mathematics , geometry , geology , layer (electronics) , social science , oceanography , sociology
A universal X‐ray diffractometer is used for the structural complex investigation of GaAs 1− x P x epitaxial layers, grown on the (100) face of GaAs substrate. Information is obtained from the analyses of diffraction patterns for some qualities of the epitaxial layers: crystallographical orientation, composition, thickness, as well as structure of the transition region. The suggested complex method has important advantages against the standard Laue method. It is far easier express and convenient for serial investigations.