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Stability of growth conditions and α‐HgI 2 crystal habit during growing by temperature oscillation method
Author(s) -
Zaletin V. M.,
Lyakh N. V.,
Ragozi. V.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200304
Subject(s) - growth rate , crystal growth , oscillation (cell signaling) , diffusion , habit , crystal habit , thermodynamics , crystal (programming language) , chemistry , materials science , chemical physics , phase (matter) , crystallography , physics , crystallization , mathematics , geometry , psychology , biochemistry , programming language , organic chemistry , computer science , psychotherapist
On the basis of analysis of the experimental data, it is shown that: the crystal growth rate is mainly determined by diffusion in vapour phase; the limitation of the growth process by transport leads to an unremitting change of the growth conditions, being the cause of slowing down the growth and the change of the growth rates ratio of the crystallographically different facets, the latter evokes refaceting; the limitation of the growth by the transport process is the factor reducing the perfection of the structure and the maximum sizes of single crystals.