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Dislocations of salol crystals grown by the Czochralski method
Author(s) -
Inoue T.,
Komatsu H.,
Jim W. Q.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200214
Subject(s) - dislocation , crystallography , czochralski method , crystal (programming language) , materials science , orientation (vector space) , etch pit density , condensed matter physics , crystal growth , geometry , chemistry , physics , etching (microfabrication) , mathematics , composite material , layer (electronics) , computer science , programming language
Crystals of salol were grown by the Czochralski method in three different pulling directions to examine the crystallographic orientation effect of the seed. They were characterized by the etch pit method and X‐ray projection topography. It was found that the dislocation density was 2 × 10 3 −1 × 10 4 /cm 2 and that the configuration of dislocations was straight. The running directions of dislocations strongly depend on the pulling directions; i.e., [ 11 0] and [ 1 10] for the crystal grown in [100] axis, [1 1 0], [ 1 10] and [110] for the crystal pulled along [112] axis and [010] for [010] axis crystal.