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Automated growing of large single crystals controlled by melt level sensor
Author(s) -
Eidelman L. G.,
Goriletsky V. I.,
Nemenov V. A.,
Protsenko V. G.,
Radkevich A. V.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200209
Subject(s) - dopant , impurity , evaporation , materials science , crystal (programming language) , displacement (psychology) , signal (programming language) , single crystal , analytical chemistry (journal) , composite material , crystallography , doping , optoelectronics , chemistry , thermodynamics , chromatography , psychology , physics , organic chemistry , computer science , psychotherapist , programming language
The process of single crystal pulling is considered with simultaneous starting material make‐up into the melt and heater temperature control in response to a signal generated by the electronic contact melt level sensor, viz.: (i) conditions ensuring the radial broadening steadiness; (ii) effect of melt level displacement, melt temperature changes, changes of solid/liquid interface shape, melt evaporation on the growing crystal diameter; (iii) conditions of crystal purification from impurities and uniform distribution of dopant.